i, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn silicon rf transistors for am and fm stages BF254 bf255 type BF254 bf255 marking ? pin co 1 c nfigural 2 e ton 3 b package1) to-92 maximum ratings parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current total power dissipation, ta s 45 'c junction temperature storage temperature range symbol vceo vces vebo 7c pm ti r?o values 20 30 5 30 250 150 -65, .. + 150 unit v ma mw 'c thermal resistance junction - ambient 5420 k/w nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice infomation famished by n; semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BF254 bf255 electrical characteristics at ta = 25 'c, unless otherwise specified. parameter symbol values mln. typ. max. unit dc characteristics dc current gain /c = 1 ma, vce - 10 v BF254 bf255 base-emitter voltage are vbe 65 35 ? ? - 0.68 220 130 ? _ v ac characteristics transition frequency /c . 1 ma, vce ? 10 v, /= 100 mhz BF254 bf255 collector-base capacitance vcb - 10 v, vbe = 0 v,/= 1 mhz collector-emitter capacitance vets = 10 v, vbe = 0 v,/= 1 mhz noise figure /c = 1 ma, vce = 10 v /=1 mhz,.= 1.5msi> /=100mhz,s.= 10msi> ft cob co f - ? ? - 260 220 0.6 0.6 1.2 3.8 - ? ? - mhz pf db y parameters, typical values, /c = 10 v / mhz common emitter 0.45 8f 254 bf255 10.7 BF254 bf255 common base 100 bf255 *? ms 0.3 0.45 0.4 0.5 34 ftii ms 0.06 0.08 1.5 1.75 -3.5 iy13| us 1.7 1.7 41 41 250 |
